creat by art - glass passivated chip junction - low profile package - low inductance - typical i r less than 5 a above 11v - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 part no. with suffix "h" means aec-q101 qualified packing code with suffix "g" means green compound (halogen-free) terminal: pure tin plated leads, solderable per jesd22-b102 meet jesd 201 class 2 whisker test t j c t stg c part no. part no. document number: ds_d1409040 version: l15 aec-q101 qualified green compound 1n4740aha0g 1n4740a h a0 g example preferred part no. part no. suffix packing code packing code suffix description do-41 5000 / 13" paper reel (reverse) b0 do-41 1000 / bulk packing note 1: "xx" defines voltage from 10v (1n4740a) to 200v (1m200z) 1n47xxa 1mxxxz (note 1) h a0 g do-41 3000 / ammo box (26mm taping) r0 do-41 5000 / 13" paper reel r1 ordering information part no. suffix packing code packing code suffix package packing 10 1.0 6.67 unit features - built-in strain relief - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec mechanical data case: do-204al (do-41) weight: 0.3g (approximately) parameter maximum ratings and electrical characterstics (t a =25c unless otherwise noted) value storage temperature range 1n4740a - 1m200z taiwan semiconductor 1w, 10v - 200v glass passivated junction silicon zener diodes - 55 to +150 - 55 to +150 do-204al (do-41) symbol note 1: mounted on cu-pad size 5mm x 5mm on pcb watts mw/c peak forward surge current, 8.3ms single half sine-wave superimposed on rated load i fsm operating junction temperature range a peak power dissipation at t a =50c, derate above 50c (note 1) p d
creat by art i zt z zt @i zt i r ma ?? ma av ma 1n4740a 9.50 10 10.50 25.0 7 700 0.25 10 7.6 454 1n4741a 10.45 11 11.55 23.0 8 700 0.25 5 8.4 414 1n4742a 11.40 12 12.60 21.0 9 700 0.25 5 9.1 380 1n4743a 12.35 13 13.65 19.0 10 700 0.25 5 9.9 344 1n4744a 14.25 15 15.75 17.0 14 700 0.25 5 11.4 304 1n4745a 15.20 16 16.80 15.5 16 700 0.25 5 12.2 285 1n4746a 17.10 18 18.90 14.0 20 750 0.25 5 13.7 250 1n4747a 19.00 20 21.00 12.5 22 750 0.25 5 15.2 225 1n4748a 20.90 22 23.10 11.5 23 750 0.25 5 16.7 205 1n4749a 22.80 24 25.20 10.5 25 750 0.25 5 18.2 190 1n4750a 25.65 27 28.35 9.5 35 750 0.25 5 20.6 170 1n4751a 28.50 30 31.50 8.5 40 1000 0.25 5 22.8 150 1n4752a 31.35 33 34.65 7.5 45 1000 0.25 5 25.1 135 1n4753a 34.20 36 37.80 7.0 50 1000 0.25 5 27.4 125 1n4754a 37.05 39 40.95 6.5 60 1000 0.25 5 29.7 115 1n4755a 40.85 43 45.15 6.0 70 1500 0.25 5 32.7 110 1n4756a 44.65 47 49.35 5.5 80 1500 0.25 5 35.8 95 1n4757a 48.45 51 53.55 5.0 95 1500 0.25 5 38.8 90 1n4758a 53.20 56 58.80 4.5 110 2000 0.25 5 42.6 80 1n4759a 58.90 62 65.10 4.0 125 2000 0.25 5 47.1 70 1n4760a 64.60 68 71.40 3.7 150 2000 0.25 5 51.7 65 1n4761a 71.25 75 78.75 3.3 175 2000 0.25 5 56.0 60 1n4762a 77.90 82 86.10 3.0 200 3000 0.25 5 62.2 55 1n4763a 86.45 91 95.55 2.8 250 3000 0.25 5 69.2 50 1n4764a 95.00 100 105.00 2.5 350 3000 0.25 5 76.0 45 1m110z 104.50 110 115.50 2.3 450 4000 0.25 5 83.6 - 1m120z 114.00 120 126.00 2.0 550 4500 0.25 5 91.2 - 1M130Z 123.50 130 136.50 1.9 700 5000 0.25 5 98.8 - 1m150z 142.50 150 157.50 1.7 1000 6000 0.25 5 114.0 - 1m160z 152.00 160 168.00 1.6 1100 6500 0.25 5 121.6 - 1m180z 171.00 180 189.00 1.4 1200 7000 0.25 5 136.8 - 1m200z 190.00 200 210.00 1.2 1500 8000 0.25 5 152.0 - notes: 1. tolerance and type number designation. the type numbers losted have a standard tolerance on the nominal zener voltage of 5% 2. specials available include: a. nominal zener voltages between the voltages shown and tighter voltage tolerances b. matched sets 3. zener voltage (vz) measurement. guarantees the zener voltage when messured at 90 seconds while maintaining the lead temperature(t l ) at 30c 1c, from the diode body 4. zener impedance (zz) derivation. the zener impedance is derives from the 60 cycle ac voltage, which results when an accurren t having and rms value equal to 10% of the dc zener current (i zt or i zk ) is superimposed on i zt or i zk. 5. surge current (i r ) non-repetitive. the rating listd in the electrical chat acteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, i zt per jedec registration; however, actual device capability is as described in figure 11. document number: ds_d1409040 version: l15 min. z zk @i zk maximum ratings and electrical characteristics (t a =25c unless otherwise noted) device (note 1) zener voltage vz@iz t v 1n4740a - 1m200z taiwan semiconductor zener impedance nom. (note 2) (note 3) test current leakage current i r @v r max. surge current max.
creat by art (t a =25c unless otherwise noted) document number: ds_d1409040 version: l15 ratings and characteristics curves 1n4740a - 1m200z taiwan semiconductor 0 0.25 0.5 0.75 1 1.25 0 25 50 75 100 125 150 p d , maximum power dissipation (watts) ambient temperature( o c) fig. 1 power temperature derating curve 1 10 100 1000 110100 zz, dynamic impedance ( ? ) iz, zener current(ma) fig.4 effect of zener voltage on zener impedance iz(rms)=0.1 iz(dc) f=1khz iz = 1ma 5 ma 20ma 1 10 100 1000 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 if, forward current (ma) v f , forward voltage (v) fig. 2 typical forward characteristics minimum maximum 0 c 25 c 70 c 150 c 1 10 100 1000 0 1 10 100 zz, dynamic impedance ( ? ) iz, zener current (ma) fig.3 effect of zener current on zener impedance iz(rms)=0.1 iz(dc) f=1khz 47v 27v 0.8v 0.001 0.01 0.1 1 10 100 1000 10000 3456789101112131415 ir, leakage current( a) vz, nominal zener voltage(v) fig.5 typical leakage current typical leakage current at 80% of nominal breakdown voltage 125 c 25 c
creat by art document number: ds_d1409040 version: l15 1n4740a - 1m200z taiwan semiconductor 10 100 1000 1 10 100 c, capacitance(pf) vz, forward voltage (v) fig.6 typical capacitance versus vz 50% of breakdown 0v bias 1.0v bias -4 -2 0 2 4 6 8 10 12 23456789101112 vz, temperature coefficient (mv/ o c) vz, zener voltage(v) fig. 7 temperature coefficients a-range for units to 12 volts range vz@ izt 1 10 100 10 100 vz, temperature coefficient (mv/ o c) vz, zener voltage(v) fig.8 temperature coefficients range vz@ i zt b-range for units 12 to 100 volts -4 -2 0 2 4 6 33.544.555.566.577.58 vz, temperature coefficient (mv/ ) vz, zener voltage(v) fig. 9 effect of zener current note:below 3 voltage above a volts changes in zener current not affect temperature coefficients vz@ i zt 0.01ma 1 ma 20ma 0 25 50 75 100 125 150 175 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 jl, junction to lead thermal resistance( o c/w) l, lead length to heat sink(inches) fig. 10 typical thermal resistance versus lead length
creat by art document number: ds_d1409040 version: l15 1n4740a - 1m200z taiwan semiconductor 1 10 100 0 0 1 10 100 1000 p pk , peak surge power watts pw, pulse width (ms) fig.11 maximum surge power 20% duty cycle 11v-91v non-repetitive 10% duty cycle 5% duty cycle 0.8v-10v non-repetitive rectangular waveform prior to initial pulse
creat by art min max min max a 2.00 2.70 0.079 0.106 b 0.71 0.86 0.028 0.034 c 25.40 - 1.000 - d 4.20 5.20 0.165 0.205 e 25.40 - 1.000 - p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d1409040 version: l15 marking diagram do-204al (do-41) 1n4740a - 1m200z taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch)
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